W.Alan Doolittle: search on Z-Library

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1

Editorial policies on financial disclosure

Jacobson, Michael F, Sharpe, Virginia A, Angell, Marcia, Ashford, Nicholas A, Blum, Alan, Chary, Lin Kaatz, Cho, Mildred, Coull, Bruce C, Davis, Devra, Doolittle, Russell F

Journal:

Nature Neuroscience

Year:

2003

Language:

english

File:

PDF, 63 KB

english, 2003

2

Publisherâs Note: âBeryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devicesâ [J. Appl. Phys 127, 215703 (2020)]

Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 618 KB

2020

3

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

Gunning, Brendan, Lowder, Jonathan, Moseley, Michael, Alan Doolittle, W.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.23 MB

english, 2012

4

Comparison of Interfacial and Bulk Ionic Motion in Analog Memristors

Greenlee, Jordan D., Calley, W. Laws, Moseley, Michael W., Doolittle, W. Alan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 437 KB

english, 2013

5

In situ investigation of the channel conductance of a Li1−xCoO2 (0

Greenlee, Jordan D., Petersburg, Cole F., Daly, William G., Alamgir, Faisal M., Alan Doolittle, W.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 659 KB

english, 2013

6

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

Namkoong, Gon, Lee, Kyoung-Keun, Madison, Shannon M., Henderson, Walter, Ralph, Stephen E., Doolittle, W. Alan

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 334 KB

english, 2005

7

The crystallization and properties of sputter deposited lithium niobite

Shank, Joshua C., Brooks Tellekamp, M., Alan Doolittle, W.

Journal:

Thin Solid Films

Year:

2016

Language:

english

File:

PDF, 862 KB

english, 2016

8

Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO3

Tellekamp, M. Brooks, Shank, Joshua C., Goorsky, Mark S., Doolittle, W. Alan

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 2.08 MB

english, 2016

9

A review of the synthesis of reduced defect density In x Ga 1-x N for all indium compositions

Clinton, Evan A., Vadiee, Ehsan, Fabien, Chloe A.M., Moseley, Michael W., Gunning, Brendan P., Alan Doolittle, W., Fischer, Alec M., Wei, Yong O., Xie, Hongen, Ponce, Fernando A.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 2.94 MB

english, 2017

10

Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices

Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 2.33 MB

2020

11

Effect of natural products on gut microbes in Formosan subterranean termite, Coptotermes formosanus

Mark Doolittle, Ashok Raina, Alan Lax, Raj Boopathy

Journal:

International Biodeterioration & Biodegradation

Year:

2007

Language:

english

File:

PDF, 248 KB

english, 2007

12

Presence of nitrogen fixing Klebsiella pneumoniae in the gut of the Formosan subterranean termite (Coptotermes formosanus)

Mark Doolittle, Ashok Raina, Alan Lax, Raj Boopathy

Journal:

Bioresource Technology

Year:

2008

Language:

english

File:

PDF, 139 KB

english, 2008

13

Mg doped GaN using a valved, thermally energetic source: enhanced incorporation, and control

Shawn D. Burnham, Gon Namkoong, Walter Henderson, W. Alan Doolittle

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 241 KB

english, 2005

14

Growth of InN on Ge substrate by molecular beam epitaxy

Elaissa Trybus, Gon Namkoong, Walter Henderson, W. Alan Doolittle, Rong Liu, Jin Mei, Fernando Ponce, Maurice Cheung, Fei Chen, Madalina Furis, Alexander Cartwright

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 270 KB

english, 2005

15

InN: A material with photovoltaic promise and challenges

Elaissa Trybus, Gon Namkoong, Walter Henderson, Shawn Burnham, W. Alan Doolittle, Maurice Cheung, Alexander Cartwright

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 474 KB

english, 2006

16

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

David Pritchett, Walter Henderson, Daniel Billingsley, W. Alan Doolittle

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 483 KB

english, 2008

17

Growth and characterization of AlxGa1−xN via NH3-based metal-organic molecular beam epitaxy

Daniel Billingsley, Walter Henderson, David Pritchett, W. Alan Doolittle

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 670 KB

english, 2009

18

The origin of the residual conductivity of GaN films on ferroelectric materials

Kyoung-Keun Lee, Zhuhua Cai, Katherine Ziemer, William Alan Doolittle

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 510 KB

english, 2009

19

III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

Kyoung-Keun Lee, Gon Namkoong, Shannon M. Madison, Stephen E. Ralph, W. Alan Doolittle, Maria Losurdo, Giovanni Bruno, Hyung Koun Cho

Journal:

Materials Science and Engineering: B

Year:

2007

Language:

english

File:

PDF, 1.25 MB

english, 2007

20

An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers

Tianbing Chen, Akil K. Sutton, Becca M. Haugerud, Walter Henderson, A.P. Gnana Prakash, John D. Cressler, Alan Doolittle, Xuefeng Liu, Alvin Joseph, Paul W. Marshall

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 611 KB

english, 2006

21

In-plane anisotropic strain of elastically and plastically deformed III-nitrides on lithium gallate

Gon Namkoong, Sa Huang, Michael Moseley, W. Alan Doolittle

Journal:

Thin Solid Films

Year:

2009

Language:

english

File:

PDF, 426 KB

english, 2009

22

Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology

W.Alan Doolittle, Gon Namkoong, Alexander G. Carver, April S. Brown

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 406 KB

english, 2003

23

Photoluminescence study of MBE grown InGaN with intentional indium segregation

Maurice C. Cheung, Gon Namkoong, Fei Chen, Madalina Furis, Haridas E. Pudavar, Alexander N. Cartwright, W. Alan Doolittle

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 155 KB

english, 2005

24

Investigation into the use of molecular hydrogen on the growth of gallium nitride via metal-organic molecular beam epitaxy

Daniel Billingsley, David Pritchett, Walter Henderson, Alexander G. Carver, Shawn D. Burnham, W. Alan Doolittle

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 141 KB

english, 2008

25

Extremely high hole concentrations in c-plane GaN

Elaissa Trybus, W. Alan Doolittle, Michael Moseley, Walter Henderson, Daniel Billingsley, Gon Namkoong, David C. Look

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 394 KB

english, 2009

26

Halide based MBE of crystalline metals and oxides

Jordan D. Greenlee, W. Laws Calley, Walter Henderson, W. Alan Doolittle

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 544 KB

english, 2012

27

Comparative map for mice and humans

Joseph H. Nadeau, Muriel T. Davisson, Donald P. Doolittle, Patricia Grant, Alan L. Hillyard, Michael R. Kosowsky, Thomas H. Roderick

Journal:

Mammalian Genome

Year:

1992

Language:

english

File:

PDF, 6.81 MB

english, 1992

28

The growth of GaN on lithium gallate (LiGaO2) substrates for material integration

April S. Brown, W. Alan Doolittle, Sangbeom Kang, Jeng-Jung Shen, Z. L. Wang, Z. Dai

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 423 KB

english, 2000

29

Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

Sangbeom Kang, W. Alan Doolittle, K. K. Lee, Z. R. Dai, Z. L. Wang, Stuart R. Stock, April S. Brown

Journal:

Journal of Electronic Materials

Year:

2001

Language:

english

File:

PDF, 1.58 MB

english, 2001

30

Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry

David Pritchett, Walter Henderson, Shawn D. Burnham, W. Alan Doolittle

Journal:

Journal of Electronic Materials

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006

31

High-Temperature Growth of GaN and AlxGa1−xN via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

Daniel Billingsley, Walter Henderson, W. Alan Doolittle

Journal:

Journal of Electronic Materials

Year:

2010

Language:

english

File:

PDF, 449 KB

english, 2010

32

Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

Daniel Billingsley, Walter Henderson, David Pritchett, W. Alan Doolittle

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 338 KB

english, 2010

33

A versatile metal-halide vapor chemistry for the epitaxial growth of metallic, insulating and semiconducting films

Walter E. Henderson, William Laws Calley, Alexander G. Carver, Hang Chen, W. Alan Doolittle

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 891 KB

english, 2011

34

The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films

Gon Namkoong, W. Alan Doolittle, April S. Brown, Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 807 KB

english, 2003

35

Growth dynamics of InGaAsGaAs by MBE

Françoise Fournier, Robert A. Metzger, Alan Doolittle, April S. Brown, Carrie Carter-Coman, Nan Marie Jokerst, Robert Bicknell-Tassius

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 1.38 MB

english, 1997

36

The status and promise of compliant substrate technology

April S. Brown, W.Alan Doolittle

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 489 KB

english, 2000

37

Effect of III-nitride polarization on VOC in p–i–n and MQW solar cells

Gon Namkoong, Patrick Boland, Si-Young Bae, Jae-Phil Shim, Dong-Seon Lee, Seong-Ran Jeon, Kurniawan Foe, Kevin Latimer, W. Alan Doolittle

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2011

Language:

english

File:

PDF, 306 KB

english, 2011

38

Tyrosinase enhances the covalent modification of DNA by dopamine

Alan H. Stokes, Buddy G. Brown, Chin K. Lee, David J. Doolittle, Kent E. Vrana

Journal:

Molecular Brain Research

Year:

1996

Language:

english

File:

PDF, 720 KB

english, 1996

39

Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics

Namkoong, Gon, Doolittle, W. Alan, Brown, April S., Losurdo, Maria, Capezzuto, Pio, Bruno, Giovanni

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 1021 KB

english, 2002

40

Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers

Losurdo, Maria, Capezzuto, Pio, Bruno, Giovanni, Namkoong, Gon, Doolittle, W. Alan, Brown, April S.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 473 KB

english, 2002

41

[IEEE 2006 IEEE 4th World Conference on Photovoltaic Energy Conference - Waikoloa, HI (2006.05.7-2006.05.12)] 2006 IEEE 4th World Conference on Photovoltaic Energy Conference - Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells

Jani, Omkar, Honsberg, Christiana, Huang, Yong, Song, June-o, Ferguson, Ian, Namkoong, Gon, Trybus, Elaissa, Doolittle, Alan, Kurtz, Sarah

Year:

2006

Language:

english

File:

PDF, 321 KB

english, 2006

42

surfaces

Sun, Qiang, Selloni, Annabella, Myers, T. H., Doolittle, W. Alan

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 926 KB

english, 2006

43

Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

Moseley, Michael, Lowder, Jonathan, Billingsley, Daniel, Doolittle, W. Alan

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 792 KB

english, 2010

44

Spatiotemporal drift-diffusion simulations of analog ionic memristors

Greenlee, Jordan D., Shank, Joshua C., Brooks Tellekamp, M., Alan Doolittle, W.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.93 MB

english, 2013

45

Radiation Effects on LiNbO$_2$ Memristors for Neuromorphic Computing Applications

Greenlee, Jordan D., Shank, Joshua C., Tellekamp, M. Brooks, Zhang, En Xia, Bi, Jinshun, Fleetwood, Daniel M., Alles, Michael L., Schrimpf, Ronald D., Doolittle, W. Alan

Journal:

IEEE Transactions on Nuclear Science

Year:

2013

Language:

english

File:

PDF, 1020 KB

english, 2013

46

Liquid Phase Electro-Epitaxy of Memristive LiNbO 2 Crystals

Greenlee, Jordan D., Shank, Joshua C., Tellekamp, M. Brooks, Gunning, Brendan P., Fabien, Chloe A. M., Doolittle, W. Alan

Journal:

Crystal Growth & Design

Year:

2014

Language:

english

File:

PDF, 2.93 MB

english, 2014

47

Effect of Orange Oil Extract on the Formosan Subterranean Termite (Isoptera: Rhinotermitidae)

Raina, Ashok, Bland, John, Doolittle, Mark, Lax, Alan, Boopathy, Raj, Folkins, Michael

Journal:

Journal of Economic Entomology

Year:

2007

Language:

english

File:

PDF, 427 KB

english, 2007

48

Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells

Fabien, Chloe A.M., Doolittle, W. Alan

Journal:

Solar Energy Materials and Solar Cells

Year:

2014

Language:

english

File:

PDF, 2.02 MB

english, 2014

49

Metal modulation epitaxy growth for extremely high hole concentrations above 10[sup 19] cm[sup −3] in GaN

Namkoong, Gon, Trybus, Elaissa, Lee, Kyung Keun, Moseley, Michael, Doolittle, W. Alan, Look, David C.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 566 KB

english, 2008

50

In situ growth regime characterization of AlN using reflection high energy electron diffraction

Burnham, Shawn D., Alan Doolittle, W.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2006

Language:

english

File:

PDF, 625 KB

english, 2006